Monolithic electronic-photonic integration in state-of-the-art CMOS processes

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Cataloged from student submitted PDF version of thesis.Includes bibliographical references (p. 388-407).As silicon CMOS transistors have scaled, increasing the density and energy efficiency of computation on a single chip, the off-chip communication link to memory has emerged as the major bottleneck within modern processors. Photonic devices promise to break this bottleneck with superior bandwidth-density and energy-efficiency. Initial work by many research groups to adapt photonic device designs to a silicon-based material platform demonstrated suitable independent performance for such links. However, electronic-photonic integration attempts to date have been limited by the high cost and complexity associated with modifying CMOS platforms suitable for modern high-performance computing applications. In this work, we instead utilize existing state-of-the-art electronic CMOS processes to fabricate integrated photonics by: modifying designs to match the existing process; preparing a design-rule compliant layout within industry-standard CAD tools; and locally-removing the handle silicon substrate in the photonic region through post-processing. This effort has resulted in the fabrication of seven test chips from two major foundries in 28, 45, 65 and 90 nm CMOS processes. Of these efforts, a single die fabricated through a widely available 45nm SOI-CMOS mask-share foundry with integrated waveguides with 3.7 dB/cm propagation loss alongside unmodified electronics with less than 5 ps inverter stage delay serves as a proof-of-concept for this approach. Demonstrated photonic devices include high-extinction carrier-injection modulators, 8-channel wavelength division multiplexing filter banks and low-efficiency silicon germanium photodetectors. Simultaneous electronic-photonic functionality is verified by recording a 600 Mb/s eye diagram from a resonant modulator driven by integrated digital circuits. Initial work towards photonic device integration within the peripheral CMOS flow of a memory process that has resulted in polysilicon waveguide propagation losses of 6.4 dB/cm will also be presented.by Jason S. Orcutt.Ph.D

Flaw-limited transport in germanium-on-silicon photodiodes

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.Includes bibliographical references (p. 201-206).Epitaxial germanium growth on silicon substrates has enabled a new class of photodiodes that can be integrated with traditional silicon electronics. Previous workers using lowthroughput growth techniques have demonstrated device functionality sufficient for many applications. To enable commercial integration, however, similar performance must be achieved using high throughput epitaxy. In this work, the current performance of germanium-on-silicon photodiodes fabricated by MIT colleagues using one such technique, low pressure chemical vapor deposition (LPCVD), is analyzed. The measured electrical characteristics of multiple diode geometries are fit to finite-element simulation to extract bulk and surface generation rates as a function of bias voltage. The extracted rates are then fit in conjunction with known states from the germanium defect literature to find the densities and field dependant cross sections of physical flaws believed to limit this promising class of devices. General interest photodiode performance is then quantified by optoelectronic measurements and analyzed in the context of the flaw limited transport. Device applicability for integration with an existing photonic sampling system is analyzed and intersymbol interference, noise and linearity metrics are measured and discussed. In conclusion, a pathway for improved devices based upon improved fabrication techniques to reduce identified flaw densities combined with changes in device design is proposed.by Jason S. Orcutt.S.M

Microbial activity in the marine deep biosphere: progress and prospects

The vast marine deep biosphere consists of microbial habitats within sediment, pore waters, upper basaltic crust and the fluids that circulate throughout it. A wide range of temperature, pressure, pH, and electron donor and acceptor conditions exists—all of which can combine to affect carbon and nutrient cycling and result in gradients on spatial scales ranging from millimeters to kilometers. Diverse and mostly uncharacterized microorganisms live in these habitats, and potentially play a role in mediating global scale biogeochemical processes. Quantifying the rates at which microbial activity in the subsurface occurs is a challenging endeavor, yet developing an understanding of these rates is essential to determine the impact of subsurface life on Earth\u27s global biogeochemical cycles, and for understanding how microorganisms in these “extreme” environments survive (or even thrive). Here, we synthesize recent advances and discoveries pertaining to microbial activity in the marine deep subsurface, and we highlight topics about which there is still little understanding and suggest potential paths forward to address them. This publication is the result of a workshop held in August 2012 by the NSF-funded Center for Dark Energy Biosphere Investigations (C-DEBI) “theme team” on microbial activity (www.darkenergybiosphere.org)

Microbial activity in the marine deep biosphere: progress and prospects

The vast marine deep biosphere consists of microbial habitats within sediment, pore waters, upper basaltic crust and the fluids that circulate throughout it. A wide range of temperature, pressure, pH, and electron donor and acceptor conditions exists—all of which can combine to affect carbon and nutrient cycling and result in gradients on spatial scales ranging from millimeters to kilometers. Diverse and mostly uncharacterized microorganisms live in these habitats, and potentially play a role in mediating global scale biogeochemical processes. Quantifying the rates at which microbial activity in the subsurface occurs is a challenging endeavor, yet developing an understanding of these rates is essential to determine the impact of subsurface life on Earth's global biogeochemical cycles, and for understanding how microorganisms in these “extreme” environments survive (or even thrive). Here, we synthesize recent advances and discoveries pertaining to microbial activity in the marine deep subsurface, and we highlight topics about which there is still little understanding and suggest potential paths forward to address them.This is the publisher’s final pdf. The published article is copyrighted by the author(s) and published by Frontiers Research Foundation. The published article can be found at: http://www.frontiersin.org/Microbiology.Keywords: Subsurface microbiology, Biogeochemistry, C-DEBI, Deep biosphere, IODP, Sediment, Oceanic crustKeywords: Subsurface microbiology, Biogeochemistry, C-DEBI, Deep biosphere, IODP, Sediment, Oceanic crus

High speed analog-to-digital conversion with silicon photonics

Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADC's by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a V[subscript pi]L of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density.Defense Advanced Research Projects Agency (contracts W911NF-04-1-0431 and HR0011-05-C-0155)Department of the Air Force (Air Force Contract FA8721-05-C-0002